Electronic transport in heavily doped Ag/n-Si composite films

Negative Photoconductance in Heavily Doped Si Nanowire Field-Effect Transistors.

We report the first observation of negative photoconductance (NPC) in n- and p-doped Si nanowire field-effect transistors (FETs) and demonstrate the strong influence of doping concentrations on the nonconventional optical switching of the devices. Furthermore, we show that the NPC of Si nanowire FETs is dependent on the wavelength of visible light due to the phonon-assisted excitation to multip...

Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films

Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrat...

Advantage on Superconductivity of Heavily Boron-Doped (111) Diamond Films

Heavily electron - doped electronic structure and isotropic superconducting gap

Y. Zhang, L. X. Yang, M. Xu, Z. R. Ye, F. Chen, C. He, J. Jiang, B. P. Xie, J. J. Ying, X. F. Wang, X. H. Chen, J. P. Hu, and D. L. Feng ∗ State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), and Department of Physics, Fudan University, Shanghai 200433, People’s Republic of China Hefei National Laboratory for Physical Sciences at Microscale and De...

Electronic Structure of Si/InAs Composite Channels

This paper reports electronic structure calculations on composite channels, consisting of indium arsenide grown on the technologically relevant (001), (011) and (112)-orientated silicon surfaces. The calculations are performed with NEMO 3-D, where atoms are represented explicitly in the spds* tight-binding model. The Valence Force Field (VFF) method is employed to minimize the strain. NEMO 3-D ...